Parameter extraction for relaxation-time based non-quasi-static MOSFET models
This paper presents a new extraction technique for non-quasi-static (NQS) delay time and gate resistance for relaxation-time-approximation based MOS transistor models. The technique is based on analysis of y dg in strong inversion, as a function of both V GS and frequency, for V DS = 0. An effective...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This paper presents a new extraction technique for non-quasi-static (NQS) delay time and gate resistance for relaxation-time-approximation based MOS transistor models. The technique is based on analysis of y dg in strong inversion, as a function of both V GS and frequency, for V DS = 0. An effective delay τ eff is computed from measured data, and a plot of τ eff versus the theoretical NQS-only delay allows the NQS relaxation time parameter and the gate resistance to be determined self-consistently. |
---|---|
ISSN: | 1071-9032 2158-1029 |
DOI: | 10.1109/ICMTS.2012.6190645 |