Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations
Junctionless transistors can be an excellent alternative for extremely scaled MOSFETs as they present a good behavior with no doping gradients between channel and source/drain regions. This paper aims at analyzing the gate capacitance (C gg ) of junctionless transistors dependence with the three mos...
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| creator | Mariniello, G. Doria, R. T. de Souza, M. Pavanello, M. A. Trevisoli, R. D. |
| description | Junctionless transistors can be an excellent alternative for extremely scaled MOSFETs as they present a good behavior with no doping gradients between channel and source/drain regions. This paper aims at analyzing the gate capacitance (C gg ) of junctionless transistors dependence with the three most important technological parameters for these devices: doping concentration (N D ), fin width (W fin ) and fin height (H fin ). |
| doi_str_mv | 10.1109/ICCDCS.2012.6188946 |
| format | Conference Proceeding |
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| subjects | Conferences Gate Capacitance Junctionless Devices |
| title | Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations |
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