Development of novel Al doped zinc oxide film and its application to solar cells
We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. AZO-X films showed a good balance between the transmittance in near-infrared area and the durability unde...
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creator | Kuramochi, H. Akiike, R. Iigusa, H. Utsumi, K. Shibutami, T. Sichanugrist, P. Konagai, M. |
description | We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. AZO-X films showed a good balance between the transmittance in near-infrared area and the durability under 85°C-85%RH condition. And AZO-X film also had higher haze value after wet chemical etching than the value obtained in normal AZO film. Furthermore, AZO-X films have been applied to amorphous Si (a-Si) single-type solar cells as the front electrodes. The efficiency as high as 10.1% with high short-circuit current has been obtained, showing that this novel AZO-X is the new promising material for front electrode of a-Si solar cells. |
doi_str_mv | 10.1109/PVSC.2011.6186580 |
format | Conference Proceeding |
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AZO-X films showed a good balance between the transmittance in near-infrared area and the durability under 85°C-85%RH condition. And AZO-X film also had higher haze value after wet chemical etching than the value obtained in normal AZO film. Furthermore, AZO-X films have been applied to amorphous Si (a-Si) single-type solar cells as the front electrodes. The efficiency as high as 10.1% with high short-circuit current has been obtained, showing that this novel AZO-X is the new promising material for front electrode of a-Si solar cells.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9781424499663</identifier><identifier>ISBN: 1424499666</identifier><identifier>EISBN: 9781424499649</identifier><identifier>EISBN: 142449964X</identifier><identifier>EISBN: 9781424499656</identifier><identifier>EISBN: 1424499658</identifier><identifier>DOI: 10.1109/PVSC.2011.6186580</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrodes ; Etching ; Photovoltaic cells ; Silicon ; Surface morphology</subject><ispartof>2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.003019-003021</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6186580$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6186580$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuramochi, H.</creatorcontrib><creatorcontrib>Akiike, R.</creatorcontrib><creatorcontrib>Iigusa, H.</creatorcontrib><creatorcontrib>Utsumi, K.</creatorcontrib><creatorcontrib>Shibutami, T.</creatorcontrib><creatorcontrib>Sichanugrist, P.</creatorcontrib><creatorcontrib>Konagai, M.</creatorcontrib><title>Development of novel Al doped zinc oxide film and its application to solar cells</title><title>2011 37th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. 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The efficiency as high as 10.1% with high short-circuit current has been obtained, showing that this novel AZO-X is the new promising material for front electrode of a-Si solar cells.</description><subject>Electrodes</subject><subject>Etching</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Surface morphology</subject><issn>0160-8371</issn><isbn>9781424499663</isbn><isbn>1424499666</isbn><isbn>9781424499649</isbn><isbn>142449964X</isbn><isbn>9781424499656</isbn><isbn>1424499658</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkE1LxDAYhCMquKz9AeLl_QNd8-Y7x6V-woILLl6XtE0hkjalKaL-egvuxbkMDzPMYQi5QbpBpPZu__5WbRhF3Cg0Shp6RgqrDQomhLVK2PN_rPgFWVFUtDRc4xUpcv6gizTlS7Yi-3v_6WMaez_MkDoY0oKwjdCm0bfwE4YG0ldoPXQh9uCGFsKcwY1jDI2bQxpgTpBTdBM0PsZ8TS47F7MvTr4mh8eHQ_Vc7l6fXqrtrgyWzqWUAqUxXou6dpxpzWvDZYfM1cpw1Ey2yiuFwgpKhXKMOdeg7WqlGIqlsia3f7PBe38cp9C76ft4uoT_Aoi0UMA</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Kuramochi, H.</creator><creator>Akiike, R.</creator><creator>Iigusa, H.</creator><creator>Utsumi, K.</creator><creator>Shibutami, T.</creator><creator>Sichanugrist, P.</creator><creator>Konagai, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201106</creationdate><title>Development of novel Al doped zinc oxide film and its application to solar cells</title><author>Kuramochi, H. ; Akiike, R. ; Iigusa, H. ; Utsumi, K. ; Shibutami, T. ; Sichanugrist, P. ; Konagai, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-5541588e74bba32773b835f12ab6831725d6e6614940046a22aac19fb66214683</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Electrodes</topic><topic>Etching</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Surface morphology</topic><toplevel>online_resources</toplevel><creatorcontrib>Kuramochi, H.</creatorcontrib><creatorcontrib>Akiike, R.</creatorcontrib><creatorcontrib>Iigusa, H.</creatorcontrib><creatorcontrib>Utsumi, K.</creatorcontrib><creatorcontrib>Shibutami, T.</creatorcontrib><creatorcontrib>Sichanugrist, P.</creatorcontrib><creatorcontrib>Konagai, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuramochi, H.</au><au>Akiike, R.</au><au>Iigusa, H.</au><au>Utsumi, K.</au><au>Shibutami, T.</au><au>Sichanugrist, P.</au><au>Konagai, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Development of novel Al doped zinc oxide film and its application to solar cells</atitle><btitle>2011 37th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2011-06</date><risdate>2011</risdate><spage>003019</spage><epage>003021</epage><pages>003019-003021</pages><issn>0160-8371</issn><isbn>9781424499663</isbn><isbn>1424499666</isbn><eisbn>9781424499649</eisbn><eisbn>142449964X</eisbn><eisbn>9781424499656</eisbn><eisbn>1424499658</eisbn><abstract>We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. AZO-X films showed a good balance between the transmittance in near-infrared area and the durability under 85°C-85%RH condition. And AZO-X film also had higher haze value after wet chemical etching than the value obtained in normal AZO film. Furthermore, AZO-X films have been applied to amorphous Si (a-Si) single-type solar cells as the front electrodes. The efficiency as high as 10.1% with high short-circuit current has been obtained, showing that this novel AZO-X is the new promising material for front electrode of a-Si solar cells.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2011.6186580</doi><tpages>3</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Electrodes Etching Photovoltaic cells Silicon Surface morphology |
title | Development of novel Al doped zinc oxide film and its application to solar cells |
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