Development of novel Al doped zinc oxide film and its application to solar cells

We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. AZO-X films showed a good balance between the transmittance in near-infrared area and the durability unde...

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Hauptverfasser: Kuramochi, H., Akiike, R., Iigusa, H., Utsumi, K., Shibutami, T., Sichanugrist, P., Konagai, M.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. AZO-X films showed a good balance between the transmittance in near-infrared area and the durability under 85°C-85%RH condition. And AZO-X film also had higher haze value after wet chemical etching than the value obtained in normal AZO film. Furthermore, AZO-X films have been applied to amorphous Si (a-Si) single-type solar cells as the front electrodes. The efficiency as high as 10.1% with high short-circuit current has been obtained, showing that this novel AZO-X is the new promising material for front electrode of a-Si solar cells.
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6186580