Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, M. H., Chang, S. T., Tai, C.-W, Shen, J.-D, Lee, C.-C
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Educational institutions Electric variables Photonic band gap Photovoltaic cells Semiconductor device modeling Strain Stress
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