Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.