Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not o...

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Hauptverfasser: Lee, M. H., Chang, S. T., Tai, C.-W, Shen, J.-D, Lee, C.-C
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Sprache:eng
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Educational institutions
Electric variables
Photonic band gap
Photovoltaic cells
Semiconductor device modeling
Strain
Stress
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creator Lee, M. H.
Chang, S. T.
Tai, C.-W
Shen, J.-D
Lee, C.-C
description The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.
doi_str_mv 10.1109/PVSC.2011.6186550
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subjects Educational institutions
Electric variables
Photonic band gap
Photovoltaic cells
Semiconductor device modeling
Strain
Stress
title Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending
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