Impact of laser hole drilling on the breakage rate of multicrystalline silicon wafers

We have studied the effect of laser hole drilling on the breakage rate of multicrystalline silicon (mc-Si) wafers, with the objective of investigating the production cost of metal wrap-through (MWT) solar cells. Wafers were grouped according to the number of holes (0, 100, and 300), and the breakage...

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Hauptverfasser: Kyumin Lee, Jong-Keun Lim, Sang-Kyun Kim, In-Sik Moon, Jae-Won Seo, Won-jae Lee, Eun-Chel Cho
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We have studied the effect of laser hole drilling on the breakage rate of multicrystalline silicon (mc-Si) wafers, with the objective of investigating the production cost of metal wrap-through (MWT) solar cells. Wafers were grouped according to the number of holes (0, 100, and 300), and the breakage force was measured by a plate-twist apparatus. Failure analysis shows that, while the wafers with holes are weaker after the laser drilling, the fracture strength is restored after a standard HF-HNO 3 wet etch.
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6186237