Improvement of microcrystalline silicon N-I-P solar cell by hydrogen plasma treatment for n/i interface

Improvement of microcrystalline silicon N-I-P solar cell by hydrogen plasma treatment for n/i interface

The performance of a nip microcrystalline silicon (μc-Si) solar cell was improved by "alternately deposition and hydrogen plasma treatment method (ADHT)" at n/i interface. The defect densities measured by static capacitance-voltage (C-V) was decreased from 2.37×10 16 cm -3 to 1.25 ×10 16 c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Haibo Xiao, Xiangbo Zeng, Xiaobing Xie, Ping Yang, Wenbo Peng, Shiyong Liu, Wenjie Yao, Xianbo Liao, Yuhua Zuo, Qiming Wang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous silicon
Photovoltaic cells
Plasmas
Solids
Substrates
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The performance of a nip microcrystalline silicon (μc-Si) solar cell was improved by "alternately deposition and hydrogen plasma treatment method (ADHT)" at n/i interface. The defect densities measured by static capacitance-voltage (C-V) was decreased from 2.37×10 16 cm -3 to 1.25 ×10 16 cm -3 . The short-circuit current Jsc was improved from 14.5 mA/cm 2 to 17.2 mA/cm 2 on bared stainless steel substrate and Obtained 24.7 mA/cm 2 on a.BR substrates.
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6186048