Development of a high precision absolute linear displacement sensor utilizing GMR spin-valves

We describe the development of a novel linear displacement sensor utilizing Giant Magnetoresistance (GMR) elements. This device is based on the division of a magnetically soft layer of a spin valve device into two anti-parallel magnetic domains. The total resistance of the spin-valve varies linearly...

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Veröffentlicht in:IEEE transactions on magnetics 1997-09, Vol.33 (5), p.3388-3390
Hauptverfasser: Miller, M.M., Lubitz, P., Prinz, G.A., Krebs, J.J., Edelstein, A.S., Cheng, S.F., Parsons, F.G.
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Sprache:eng
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Zusammenfassung:We describe the development of a novel linear displacement sensor utilizing Giant Magnetoresistance (GMR) elements. This device is based on the division of a magnetically soft layer of a spin valve device into two anti-parallel magnetic domains. The total resistance of the spin-valve varies linearly with displacement of the domain wall because of different resistances of the aligned and anti-aligned magnetic states of the spin-valve. Domain wall translation is achieved by the use of a magnetic wall "trap" generated by permanent magnets. Displacement is thus related directly to the device resistance.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.617953