Sensitive stress-impedance micro sensor using amorphous magnetostrictive wire

Sensitive stress-impedance micro sensor using amorphous magnetostrictive wire

A giant stress-impedance (GSI) effect with the strain-gauge factor more than 1200 was found in negative magnetostrictive amorphous CoSiB wires of 30-/spl mu/m diameter magnetized with a high frequency current or a sharp pulse current. A sensitive stress sensor is constructed using a CMOS IC multivib...

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Veröffentlicht in:IEEE transactions on magnetics 1997-09, Vol.33 (5), p.3355-3357
Hauptverfasser: Shen, L.P., Uchiyama, T., Mohri, K., Kita, E., Bushida, K.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous magnetic materials
Amorphous materials
CMOS integrated circuits
Frequency
Magnetic circuits
Magnetic semiconductors
Magnetic sensors
Magnetostriction
Stress
Wire
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Zusammenfassung:A giant stress-impedance (GSI) effect with the strain-gauge factor more than 1200 was found in negative magnetostrictive amorphous CoSiB wires of 30-/spl mu/m diameter magnetized with a high frequency current or a sharp pulse current. A sensitive stress sensor is constructed using a CMOS IC multivibrator circuit in which the amorphous wire is magnetized with a sharp pulse train current. The amorphous wire GSI sensor will be applied for detection of such as pressure, tension, stream speed for liquid and gases and mechano-cardiogram with the sensitivity of 5-6 times higher than that of the semiconductor stress sensors utilizing the piezo-resistance effect showing a gauge factor of about 200.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.617942