Single-domain model for pseudo spin valve MRAM cells

The dynamic behavior of pseudo spin valve memory cells fabricated from GMR sandwich material with magnetic layers of differing thickness has been studied using a single domain model. The model takes into account torques within each magnetic layer as well as magnetostatic coupling between layers. When dynamic effects are included, the model predicts that inadvertent writing of a bit may occur during a read operation when the word field is pulsed on very quickly. Ramping up the word field over a period of several ns or increasing the thickness differential between the magnetic layers is shown to diminish the likelihood of an unintentional write.