Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors

We evaluated the effects of low-energy ultraviolet (UV) and visible light in organic thin-film-transistors, with an hexamethyldisilazane-treated SiO 2 gate dielectric. After visible-light irradiation, the devices showed temporary variation in the threshold voltage, drain current, and transconductanc...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-05, Vol.59 (5), p.1501-1509
Hauptverfasser:	Wrachien, N., Cester, A., Bari, D., Jakabovic, J., Kovac, J., Donoval, D., Meneghesso, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge carrier processes Degradation Electronics Exact sciences and technology Organic devices Organic thin film transistors Pentacene Radiation effects reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices thin-film-transistors Transconductance Transistors ultraviolet (UV) irradiation
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Beschreibung
Zusammenfassung:	We evaluated the effects of low-energy ultraviolet (UV) and visible light in organic thin-film-transistors, with an hexamethyldisilazane-treated SiO 2 gate dielectric. After visible-light irradiation, the devices showed temporary variation in the threshold voltage, drain current, and transconductance. When UV irradiation is performed, the devices exhibit significant and permanent degradation, with a transconductance drop up to -18%.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2012.2187338