A fully integrated pulsewidth modulator for class-S system
Switch-mode power amplification of varying envelope signal has gained influence in the mobile communication system because of its high linearity and efficiency. A fully integrated pulsewidth modulator (PWM) has been presented in this paper for switch-mode power amplifier. The HBT BiCMOS design of pu...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Switch-mode power amplification of varying envelope signal has gained influence in the mobile communication system because of its high linearity and efficiency. A fully integrated pulsewidth modulator (PWM) has been presented in this paper for switch-mode power amplifier. The HBT BiCMOS design of pulsewidth modulator circuit is applied to the LTE (Long Term Evolution) frequency range, which converts digitally modulated 955 MHz RF signal with a clock rate of 2.4 GHz. The modulator has been designed in a 0.25-μm SiGe-BiCMOS technology. |
---|---|
ISSN: | 1738-9445 |