A fully integrated pulsewidth modulator for class-S system

Switch-mode power amplification of varying envelope signal has gained influence in the mobile communication system because of its high linearity and efficiency. A fully integrated pulsewidth modulator (PWM) has been presented in this paper for switch-mode power amplifier. The HBT BiCMOS design of pu...

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Bibliographische Detailangaben
Hauptverfasser: Bonghyuk Park, Jaeho Jung
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Switch-mode power amplification of varying envelope signal has gained influence in the mobile communication system because of its high linearity and efficiency. A fully integrated pulsewidth modulator (PWM) has been presented in this paper for switch-mode power amplifier. The HBT BiCMOS design of pulsewidth modulator circuit is applied to the LTE (Long Term Evolution) frequency range, which converts digitally modulated 955 MHz RF signal with a clock rate of 2.4 GHz. The modulator has been designed in a 0.25-μm SiGe-BiCMOS technology.
ISSN:1738-9445