Scalable HEMT distributed model for millimeter-wave applications

Scalable HEMT distributed model for millimeter-wave applications

A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear mo...

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Bibliographische Detailangaben
Hauptverfasser: Hoque, M. E., Parker, A. E., Heimlich, M., Mahon, S. J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
HEMT
Integrated circuit modeling
Logic gates
Manifolds
Microwave FETs
millimeter wave transistors
Noise measurement
scalability
scattering parameters
semiconductor device modeling
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Beschreibung
Zusammenfassung:A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.
ISSN:2165-4727
2165-4743