An 80 GHz Wide Tuning Range Push-Push VCO With -Boosted Full-Wave Rectification Technique in 90 nm CMOS
In this letter, an 80 GHz push-push VCO with a g m -boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Bes...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2012-04, Vol.22 (4), p.203-205 |
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| creator | Chu, Shu-Wei Wang, Chorng-Kuang |
| description | In this letter, an 80 GHz push-push VCO with a g m -boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Besides, the distributed LC-tank structure helps to further split the parasitic capacitances of buffers and then the push-push pair can extend the frequency tuning range effectively. The push-push VCO is implemented in 90 nm CMOS technology , and it achieves a tuning range of 3.4% and phase noise of -104.2 dBc/Hz at 10 MHz offset. The core area is 0.3 × 0.21 mm 2 , and the power consumption is 2.66 mW from a 1.4 V supply voltage excluding buffers. |
| doi_str_mv | 10.1109/LMWC.2012.2189377 |
| format | Article |
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Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Besides, the distributed LC-tank structure helps to further split the parasitic capacitances of buffers and then the push-push pair can extend the frequency tuning range effectively. The push-push VCO is implemented in 90 nm CMOS technology , and it achieves a tuning range of 3.4% and phase noise of -104.2 dBc/Hz at 10 MHz offset. The core area is 0.3 × 0.21 mm 2 , and the power consumption is 2.66 mW from a 1.4 V supply voltage excluding buffers.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2012.2189377</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; CMOS ; CMOS integrated circuits ; CMOS technology ; Frequency conversion ; frequency doubler ; millimeter-wave (mm-wave) ; push-push pair ; rectifier ; Tuning ; voltage-controlled oscillator (VCO) ; Voltage-controlled oscillators ; {\rm g} _{\rm m} -boosted</subject><ispartof>IEEE microwave and wireless components letters, 2012-04, Vol.22 (4), p.203-205</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1376-4f32488dc501dff0de50821b6ac429107fdf755311b753ec9a630d6b931d68c63</citedby><cites>FETCH-LOGICAL-c1376-4f32488dc501dff0de50821b6ac429107fdf755311b753ec9a630d6b931d68c63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6172199$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6172199$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chu, Shu-Wei</creatorcontrib><creatorcontrib>Wang, Chorng-Kuang</creatorcontrib><title>An 80 GHz Wide Tuning Range Push-Push VCO With -Boosted Full-Wave Rectification Technique in 90 nm CMOS</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>In this letter, an 80 GHz push-push VCO with a g m -boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Besides, the distributed LC-tank structure helps to further split the parasitic capacitances of buffers and then the push-push pair can extend the frequency tuning range effectively. The push-push VCO is implemented in 90 nm CMOS technology , and it achieves a tuning range of 3.4% and phase noise of -104.2 dBc/Hz at 10 MHz offset. The core area is 0.3 × 0.21 mm 2 , and the power consumption is 2.66 mW from a 1.4 V supply voltage excluding buffers.</description><subject>Capacitance</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Frequency conversion</subject><subject>frequency doubler</subject><subject>millimeter-wave (mm-wave)</subject><subject>push-push pair</subject><subject>rectifier</subject><subject>Tuning</subject><subject>voltage-controlled oscillator (VCO)</subject><subject>Voltage-controlled oscillators</subject><subject>{\rm g} _{\rm m} -boosted</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kNtOwkAQhhujiYg-gPFm4_3iTrfdwyU2AiYQDKJcNmUPsAS22G1N9OltA_FmZpL5_zl8UXQPZABA5NN0tsoGMYF4EIOQlPOLqAdpKjBwllx2NQUMlMjr6CaEHSGQiAR60WbokSBoPPlFK6cNWjbe-Q1aFH5j0FsTtrgL6DObt_16i_BzWYbaaDRq9nu8Kr4NWhhVO-tUUbvSo6VRW---GoOcR5Igf0DZbP5-G13ZYh_M3Tn3o4_RyzKb4Ol8_JoNp1gB5QwnlsaJEFqlBLS1RJuUiBjWrFBJLIFwqy1P219gzVNqlCwYJZqtJQXNhGK0Hz2e5h6rsj0i1PmubCrfrsylpEJyKjsRnESqKkOojM2PlTsU1U8OJO9w5h3OvMOZn3G2noeTxxlj_vUMeAzt4D_a8m11</recordid><startdate>201204</startdate><enddate>201204</enddate><creator>Chu, Shu-Wei</creator><creator>Wang, Chorng-Kuang</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201204</creationdate><title>An 80 GHz Wide Tuning Range Push-Push VCO With -Boosted Full-Wave Rectification Technique in 90 nm CMOS</title><author>Chu, Shu-Wei ; Wang, Chorng-Kuang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1376-4f32488dc501dff0de50821b6ac429107fdf755311b753ec9a630d6b931d68c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Capacitance</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Frequency conversion</topic><topic>frequency doubler</topic><topic>millimeter-wave (mm-wave)</topic><topic>push-push pair</topic><topic>rectifier</topic><topic>Tuning</topic><topic>voltage-controlled oscillator (VCO)</topic><topic>Voltage-controlled oscillators</topic><topic>{\rm g} _{\rm m} -boosted</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chu, Shu-Wei</creatorcontrib><creatorcontrib>Wang, Chorng-Kuang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chu, Shu-Wei</au><au>Wang, Chorng-Kuang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An 80 GHz Wide Tuning Range Push-Push VCO With -Boosted Full-Wave Rectification Technique in 90 nm CMOS</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2012-04</date><risdate>2012</risdate><volume>22</volume><issue>4</issue><spage>203</spage><epage>205</epage><pages>203-205</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>In this letter, an 80 GHz push-push VCO with a g m -boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Besides, the distributed LC-tank structure helps to further split the parasitic capacitances of buffers and then the push-push pair can extend the frequency tuning range effectively. The push-push VCO is implemented in 90 nm CMOS technology , and it achieves a tuning range of 3.4% and phase noise of -104.2 dBc/Hz at 10 MHz offset. The core area is 0.3 × 0.21 mm 2 , and the power consumption is 2.66 mW from a 1.4 V supply voltage excluding buffers.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2012.2189377</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2012-04, Vol.22 (4), p.203-205 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Capacitance CMOS CMOS integrated circuits CMOS technology Frequency conversion frequency doubler millimeter-wave (mm-wave) push-push pair rectifier Tuning voltage-controlled oscillator (VCO) Voltage-controlled oscillators {\rm g} _{\rm m} -boosted |
| title | An 80 GHz Wide Tuning Range Push-Push VCO With -Boosted Full-Wave Rectification Technique in 90 nm CMOS |
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