An 80 GHz Wide Tuning Range Push-Push VCO With -Boosted Full-Wave Rectification Technique in 90 nm CMOS
In this letter, an 80 GHz push-push VCO with a g m -boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Bes...
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Veröffentlicht in: | IEEE microwave and wireless components letters 2012-04, Vol.22 (4), p.203-205 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this letter, an 80 GHz push-push VCO with a g m -boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g m -boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Besides, the distributed LC-tank structure helps to further split the parasitic capacitances of buffers and then the push-push pair can extend the frequency tuning range effectively. The push-push VCO is implemented in 90 nm CMOS technology , and it achieves a tuning range of 3.4% and phase noise of -104.2 dBc/Hz at 10 MHz offset. The core area is 0.3 × 0.21 mm 2 , and the power consumption is 2.66 mW from a 1.4 V supply voltage excluding buffers. |
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ISSN: | 1531-1309 2771-957X 1558-1764 2771-9588 |
DOI: | 10.1109/LMWC.2012.2189377 |