Thermal conductivity manipulation in single crystal silicon via lithographycally defined phononic crystals

The thermal conductivity of single crystal silicon was engineered to be as low as 32.6W/mK using lithographically defined phononic crystals (PnCs), which is only one quarter of bulk silicon thermal conductivity [1]. Specifically sub-micron through-holes were periodically patterned in 500nm-thick sil...

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Hauptverfasser: Bongsang Kim, Nguyen, J., Clews, P. J., Reinke, C. M., Goettler, D., Leseman, Z. C., El-Kady, I., Olsson, R. H.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The thermal conductivity of single crystal silicon was engineered to be as low as 32.6W/mK using lithographically defined phononic crystals (PnCs), which is only one quarter of bulk silicon thermal conductivity [1]. Specifically sub-micron through-holes were periodically patterned in 500nm-thick silicon layers effectively enhancing both coherent and incoherent phonon scattering and resulting in as large as a 37% reduction in thermal conductivity beyond the contributions of the thin-film and volume reduction effects. The demonstrated method uses conventional lithography-based technologies that are directly applicable to diverse micro/nano-scale devices, leading to potential performance improvements where heat management is important.
ISSN:1084-6999
DOI:10.1109/MEMSYS.2012.6170122