Novel passivation process for GaAs(110) surface with sulf-solutions

In order to enhance the effect of sulfur passivation, the influence of solution polarity on the passivation was investigated; With the following conclusion: the smaller polarity of the solution, the better effect of the passivation. A novel passivation solution made up of (NH 4 ) 2 S+Se+t-C 4 H 9 OH has been prepared. The PL spectrum intensity of the samples treated by (NH 4 ) 2 S+Se+t-C 4 H 9 OH is 23 times stronger than that of non-passivated samples and more efficient than (NH 4 ) 2 S passivation alone. This result indicates that (NH 4 ) 2 S+Se+t-C 4 H 9 OH solution has a better passivation effect on GaAs(110) surface.