Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

A new relaxation-time-approximation-based nonquasi-static (NQS) MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low freque...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2012-05, Vol.59 (5), p.1236-1244
Hauptverfasser:	Zeqin Zhu, Gildenblat, G., McAndrew, C. C., Ik-Sung Lim
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bulk charge compact model Computational modeling Data models Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency measurement Integrated circuit modeling inversion charge Logic gates Mathematical model mixed-signal MOSFET circuits nonquasi-static (NQS) relaxation time approximation (RTA) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices small-signal surface potential Theoretical study. Circuits analysis and design transient Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A new relaxation-time-approximation-based nonquasi-static (NQS) MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static description of the MOSFET. The model is implemented in two widely used circuit simulators and is tested for speed and convergence. It is verified by comparison with technology computer-aided design simulations and experimental data and by application of a recently developed benchmark test for NQS MOSFET models.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2012.2186636