Electro-thermal model extraction of power GaN HEMT using I-V pulsed and DC measurements

Electro-thermal model extraction of power GaN HEMT using I-V pulsed and DC measurements

A multiple-pole electro-thermal equivalent subcircuit model of power GaN HEMT is proposed. A quick and reliable electrical approach for direct extraction of thermal resistances and thermal capacitances is presented. Good agreement between measured and simulated I-V characteristics with thermal effec...

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Bibliographische Detailangaben
Hauptverfasser: Zhifu Hu, Xuebang Gao, Shujun Cai
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium nitride
Heating
HEMTs
Power measurement
Pulse measurements
Radio access networks
Temperature measurement
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Beschreibung
Zusammenfassung:A multiple-pole electro-thermal equivalent subcircuit model of power GaN HEMT is proposed. A quick and reliable electrical approach for direct extraction of thermal resistances and thermal capacitances is presented. Good agreement between measured and simulated I-V characteristics with thermal effect validates the electro-thermal model.
ISSN:2162-7541
2162-755X
DOI:10.1109/ASICON.2011.6157338