Resistive switching behaviors of the ZnO/SiOx/ZnO tri-layer for nonvolatile memory devices

Resistive switching behaviors of the ZnO/SiOx/ZnO tri-layer for nonvolatile memory devices

Bipolar resistive switching effects were investigated for nonvolatile memory applications in a ZnO/SiO x /ZnO structure. ZnO thin films were grown by radio frequency magnetron sputtering at room temperature. And SiO x films were grown by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. T...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Youngill Kim, Eunkyeom Kim, Jaekyu Jeong, Kyoungwan Park
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Nonvolatile memory
Performance evaluation
Resistance
Sputtering
Switches
Zinc oxide
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Bipolar resistive switching effects were investigated for nonvolatile memory applications in a ZnO/SiO x /ZnO structure. ZnO thin films were grown by radio frequency magnetron sputtering at room temperature. And SiO x films were grown by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. The resistance ratios of high/low resistance state were in the range of about 1 order. The resistive random access memory with this structure will show a great promise for high density memory device.
DOI:10.1109/NMDC.2011.6155383