In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films

We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-...

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Hauptverfasser:	Shin, Gayoung, Lee, Ho-Nyung, Im, Jiseong, Gu, Gil-Ho, Oh, Sang Ho
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Diffraction Education Electrodes Epitaxial growth Nanoscale devices Substrates
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creator	Shin, Gayoung Lee, Ho-Nyung Im, Jiseong Gu, Gil-Ho Oh, Sang Ho
description	We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.
doi_str_mv	10.1109/NMDC.2011.6155296
format	Conference Proceeding
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identifier	ISBN: 9781457721397
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Diffraction Education Electrodes Epitaxial growth Nanoscale devices Substrates
title	In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films
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