In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films

In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films

We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-...

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Bibliographische Detailangaben
Hauptverfasser: Shin, Gayoung, Lee, Ho-Nyung, Im, Jiseong, Gu, Gil-Ho, Oh, Sang Ho
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diffraction
Education
Electrodes
Epitaxial growth
Nanoscale devices
Substrates
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Zusammenfassung:We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O 3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.
DOI:10.1109/NMDC.2011.6155296