Crystal Growth of Ce Doped (,)(,) Single Crystal by the Micro-Puling-Down Method and Their Scintillation Properties

Ce:(Lu,Y) 3 (Ga,Al) 5 O 12 single crystals were grown by the μ -PD method with RF heating system. In these crystals, Ce 3+ 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce:Lu 2 Y 1 (Ga,Al) 5 O 12 series,the Ce0.2% Lu 2 Y 1 Ga 3 Al 2 O 12 crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV ã-ray excitation ( 137 Cs source) and detection by an APD S8664-55(Hamamatsu). The light yield was calibrated from Fe 55 direct irradiation peak to APD. The light yield of Ce0.2%: Lu 2 Y 1 Ga 3 Al 2 O 12 sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.