Effects of annealing time on the electrical properties of Y2O3 gate on silicon

Effects of annealing time on the electrical properties of Y2O3 gate on silicon

In this work, the effects of annealing time (15, 30 [11], 45 minutes) on the MOS characteristics of RF magnetron sputtered Y 2 0 3 gate oxide on Si substrate have been studied.

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Bibliographische Detailangaben
Hauptverfasser: Quah, H. J., Kuan Yew Cheong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
High K dielectric materials
Logic gates
Silicon
Tunneling
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Beschreibung
Zusammenfassung:In this work, the effects of annealing time (15, 30 [11], 45 minutes) on the MOS characteristics of RF magnetron sputtered Y 2 0 3 gate oxide on Si substrate have been studied.
DOI:10.1109/ESciNano.2012.6149686