Photochemical reactivity of bis-carbamate photobase generators

The extension of 193nm technology is desirable due to the magnitude of past investments. Since "optical" advances are increasingly difficult, there is a strong demand for more sophisticated "smart" resists to increase pattern density. Many studies have proven double pattering can be used for the extension of 193nm lithography. In this study, a new class of two stage photobase generators will be introduced along with the synthetic procedure. The characterizations for exposure study by NMR have shown typical characteristics of two stage decomposition under the exposure of 254nm light. GCMS was utilized to indicate the formation of photobase and major products from secondary photochemical reactions. Kinetic simulation was also taken into account to show the consistence of proposed mechanism.