Characterization and resistive switching properties of solution-processed HfO2, HfSiO4, and ZrSiO4 thin films on rigid and flexible substrates

Characterization and resistive switching properties of solution-processed HfO2, HfSiO4, and ZrSiO4 thin films on rigid and flexible substrates

Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiO x [1] or TaO x [2]. However, it is necessary to explore the memristive prop...

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Bibliographische Detailangaben
Hauptverfasser: Tedesco, J. L., Zheng, W., Kirillov, O. A., Pookpanratana, S., Jang, H., Kavuri, P. P., Nguyen, N. V., Richter, C. A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Memristors
Optical device fabrication
Optical films
Optical imaging
Optical switches
Substrates
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Zusammenfassung:Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiO x [1] or TaO x [2]. However, it is necessary to explore the memristive properties of other dielectric materials, because these dielectrics may have advantageous properties that have not yet been explored.
DOI:10.1109/ISDRS.2011.6135416