2D analytical DC model for nanoscale Schottky barrier DG-MOSFETs

2D analytical DC model for nanoscale Schottky barrier DG-MOSFETs

In this paper, we present a current model for lightly doped Schottky barrier Double-Gate MOSFETs based on the 2D conformal mapping technique [1] for the electrostatics [2], [3]. The ambipolar behavior is predicted by the superposition of the separately estimated electron and hole currents. Our model...

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Bibliographische Detailangaben
Hauptverfasser: Schwarz, M., Holtij, T., Kloes, A., Iniguez, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Charge carrier processes
Electric fields
Logic gates
Probability
Thermionic emission
Tunneling
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Beschreibung
Zusammenfassung:In this paper, we present a current model for lightly doped Schottky barrier Double-Gate MOSFETs based on the 2D conformal mapping technique [1] for the electrostatics [2], [3]. The ambipolar behavior is predicted by the superposition of the separately estimated electron and hole currents. Our model includes essential 2D effects combined with diffusion effects and shows accurate I-V curves for channel lengths down to 22 nm.
DOI:10.1109/ISDRS.2011.6135243