Growth and characterization of nanowires and nanorods on Al2O3(110), Si(111) and SiO2/p-Si(100) by MOCVD
We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO 2 /p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injecto...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO 2 /p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injector. Prior to the growth of the nanostructure, a thin film of ZnO was grown at 400°C for 2 mins, DeZ was used as ZnO precursor with a flow rate of 200 sccm, N 2 O was used as oxygen source with a flow rate of 50 sccm and N 2 was used as the carrier gas. |
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DOI: | 10.1109/ISDRS.2011.6135147 |