Growth and characterization of nanowires and nanorods on Al2O3(110), Si(111) and SiO2/p-Si(100) by MOCVD

We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO 2 /p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injecto...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Rivera, A., Anwar, M., Monville, M. R., Shihsheng Chang, Zeller, J., Sood, A. K., Manzur, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO 2 /p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injector. Prior to the growth of the nanostructure, a thin film of ZnO was grown at 400°C for 2 mins, DeZ was used as ZnO precursor with a flow rate of 200 sccm, N 2 O was used as oxygen source with a flow rate of 50 sccm and N 2 was used as the carrier gas.
DOI:10.1109/ISDRS.2011.6135147