High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET

In this paper we present a 55 nm gate length In 0.53 Ga 0.47 As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 14...

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Hauptverfasser:	Egard, M., Ohlsson, L., Borg, B. M., Lenrick, F., Wallenberg, R., Wernersson, L.-E, Lind, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Abstracts Condensed Matter Physics Den kondenserade materiens fysik Electrical Engineering, Electronic Engineering, Information Engineering Elektroteknik och elektronik Engineering and Technology Fires Fysik Gold Hafnium oxide HEMTs Logic gates Natural Sciences Naturvetenskap Performance evaluation Physical Sciences Teknik
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Zusammenfassung:	In this paper we present a 55 nm gate length In 0.53 Ga 0.47 As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
ISSN:	0163-1918 2156-017X
DOI:	10.1109/IEDM.2011.6131544