Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides

Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides

We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is monolithically integrated with silicon-on-insulator waveguides. The active quantum well section is selectively grown on a silicon-on-insulator substrate and has a footprint of 8 . The integrated device demonstrates more t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2012-03, Vol.24 (6), p.461-463
Hauptverfasser: Shen Ren, Yiwen Rong, Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. B.
Format: Artikel
Sprache:eng
Schlagworte:
Germanium quantum well
Optical device fabrication
optical interconnects
Optical modulation
optical waveguide modulator
Optical waveguides
optoelectronics
Photoconductivity
quantum-confined Stark effect
Silicon
Silicon germanium
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is monolithically integrated with silicon-on-insulator waveguides. The active quantum well section is selectively grown on a silicon-on-insulator substrate and has a footprint of 8 . The integrated device demonstrates more than 3.2-dB contrast ratio with 1-V direct voltage swing at 3.5 GHz. We also show the potential of this device to operate in the telecommunication C-band at room temperature.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2181496