The STeTSiMS STT-RAM simulation and modeling system

There is growing interest in emerging non-volatile memory technologies such as Phase-Change Memory, Memristors, and Spin-Transfer Torque RAM (STT-RAM). STT-RAM, in particular, is experiencing rapid development that can be difficult for memory systems researchers to take advantage of. What is needed...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Smullen, Clinton W., Nigam, A., Gurumurthi, S., Stan, M. R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anisotropic magnetoresistance Magnetic tunneling Mathematical model Random access memory Switches Torque Tunneling magnetoresistance
Online-Zugang:	Volltext bestellen
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