Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity

Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity

The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at U...

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Bibliographische Detailangaben
Hauptverfasser: Kirley, M., Yang, Ben, Willis, K., Weber, M., Sule, N., Hagness, S., Knezevic, I., Booske, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Conductivity measurement
Predictive models
Semiconductor device measurement
Semiconductor device modeling
Semiconductor process modeling
Silicon
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Beschreibung
Zusammenfassung:The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.
ISSN:2162-2027
DOI:10.1109/irmmw-THz.2011.6105218