Effects of the carrier density on the THz-induced nonlinearity in photoexcited GaAs

Effects of the carrier density on the THz-induced nonlinearity in photoexcited GaAs

We investigate the effects of electron carrier density on the nonlinear response of photoexcited GaAs, illuminated by intense terahertz fields. We use the optical-pump/THz-probe technique, and explain our experimental results with an intervalley-scattering-based model.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Sharma, G., Hafez, H., Al-Naib, I., Morandotti, R., Ozaki, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier density
Charge carrier processes
Gallium arsenide
Nonlinear optics
Optical pulses
Optical pumping
Scattering
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigate the effects of electron carrier density on the nonlinear response of photoexcited GaAs, illuminated by intense terahertz fields. We use the optical-pump/THz-probe technique, and explain our experimental results with an intervalley-scattering-based model.
ISSN:2162-2027
DOI:10.1109/irmmw-THz.2011.6105005