Development of a chip-based micromachined THz-spectrometer

We present a coplanar waveguide design with integrated photoconductive transceivers; the system is fabricated on a 1.4-μm-thick SiO 2 /Si 3 N 4 membrane supported by a micromachined silicon substrate. LTG GaAs is used as photon absorbing material of the photoconductive switches allowing full electro...

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Hauptverfasser: Xiaohuan Fu, Attenkofer, K., Wong, T. T. Y.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We present a coplanar waveguide design with integrated photoconductive transceivers; the system is fabricated on a 1.4-μm-thick SiO 2 /Si 3 N 4 membrane supported by a micromachined silicon substrate. LTG GaAs is used as photon absorbing material of the photoconductive switches allowing full electron mobility at strongly reduced carrier-lifetime. By combining this circuit with a bonded sample cell, we are able to measure transmitted, reflected intensity and its phase correlations. The system was characterized by theoretical calculation and simulations.
ISSN:2162-2027
DOI:10.1109/irmmw-THz.2011.6104948