A compact 65W 1.7-2.3GHz class-E GaN power amplifier for base stations

A compact 65W 1.7-2.3GHz class-E GaN power amplifier for base stations

A very compact, highly efficient, 65W wideband GaN class-E power amplifier is presented. Optimum class-E loading conditions are achieved over a broad frequency range using a wideband design and implementation approach. Both input and output matching networks are implemented with bondwire inductors a...

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Bibliographische Detailangaben
Hauptverfasser: Kanjun Shi, Calvillo-Cortes, D. A., de Vreede, L. C. N., van Rijs, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bondwire
class-E
Feeds
Gallium nitride
Gallium Nitride (GaN)
Impedance
Impedance matching
Inductance
Inductors
power amplifiers
power transistors
Wideband
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Beschreibung
Zusammenfassung:A very compact, highly efficient, 65W wideband GaN class-E power amplifier is presented. Optimum class-E loading conditions are achieved over a broad frequency range using a wideband design and implementation approach. Both input and output matching networks are implemented with bondwire inductors and MOS/MIM capacitors. The resulting amplifier operates from 1.7 to 2.3GHz with a power gain of 12.3±0.9 dB, while providing an output power of 42 to 65W with a PAE ranging from 63 to 72% (DE of 68 to 75%). The total area of the amplifier, including bias arrangements, input and output matching networks to 50Ω, is only 2-by-2 cm 2 .