Characterization of GaN and GaAs FETs through a new pulsed measurement system

Summary form only given. The papers selected for presentation this year focus either on efficiency or on supporting tools that are two of the major trends in the domain. The organizers again decided this year to reserve space for invited sessions and for open discussions in addition to the regular papers. The quality and variety of the topics covered by the submitted papers reflect the vitality of this research area. The work of the referees and the program committee have led to the selection of a collection of papers reflecting current research efforts in the field. The organizers believe that the papers presented here advance the field significantly and that other researchers in the area will want to become familiar with their contents.