A high efficiency, compact size, single die tri-mode PAM for 3G/4G handset applications

A set of high level integration, compact size (1.3mmxl.lmm), single die, tri-mode power amplifiers are developed using Bi-FET (HBT+E/D-PHEMT) technology for 3G & 4G mobile handset applications. They have high efficiency optimized at mid and low power modes for long battery life. They also have excellent performance over voltage and over temperature (-40C to +85C). These tri-mode PAMs cover 3GPP Band 1 & 2, Band 5 & 8, and Band 38 & 40. They can be applied to TD-SCDMA and TD-LTE markets too. These high-power, high-linearity, high-efficiency tri-mode PAMs integrate an on-chip regulator, PAON logic, two digital bits for mode selection, temperature compensation, dynamic linearization bias and output coupler with coupling ~20dB. They are packaged in a 10-pin, 3×3×1 mm laminate module using BT material. These PAMs include PA input and output matching, bias chokes, DC blocking capacitor and coupler inside.