Realisation of submicron gate MESFETs using standard optical photolithography
Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz.
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| creator | Kalfane, A. Karouta, F. Heyker, H.C. Kwaspen, J.J.M. |
| description | Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz. |
| doi_str_mv | 10.1109/COMMAD.1996.610111 |
| format | Conference Proceeding |
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F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz.</description><identifier>ISBN: 0780333748</identifier><identifier>ISBN: 9780780333741</identifier><identifier>DOI: 10.1109/COMMAD.1996.610111</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Electron optics ; FETs ; Frequency ; Gallium arsenide ; Lithography ; MESFETs ; Metallization ; Optical noise ; Resists</subject><ispartof>1996 Conference on Optoelectronic and Microelectronic Materials and Devices. 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Proceedings</btitle><stitle>COMMAD</stitle><date>1996</date><risdate>1996</risdate><spage>223</spage><epage>226</epage><pages>223-226</pages><isbn>0780333748</isbn><isbn>9780780333741</isbn><abstract>Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz.</abstract><pub>IEEE</pub><doi>10.1109/COMMAD.1996.610111</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum Electron optics FETs Frequency Gallium arsenide Lithography MESFETs Metallization Optical noise Resists |
| title | Realisation of submicron gate MESFETs using standard optical photolithography |
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