Realisation of submicron gate MESFETs using standard optical photolithography

Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz.

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Bibliographische Detailangaben
Hauptverfasser:	Kalfane, A., Karouta, F., Heyker, H.C., Kwaspen, J.J.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum Electron optics FETs Frequency Gallium arsenide Lithography MESFETs Metallization Optical noise Resists
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Beschreibung
Zusammenfassung:	Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz.
DOI:	10.1109/COMMAD.1996.610111