A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing

A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz F T and 270 GHz F MAX . The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base...

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Bibliographische Detailangaben
Hauptverfasser:	Preisler, E., Talor, G., Howard, D., Yan, Z., Booth, R., Zheng, J., Chaudhry, S., Racanelli, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Heterojunction bipolar transistors Insertion loss Manufacturing Millimeter Wave Transistors Radio frequency Silicon bipolar/BiCMOS process technology Silicon germanium Varactors
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Beschreibung
Zusammenfassung:	A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz F T and 270 GHz F MAX . The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base platform which has been running at TowerJazz for almost a decade and has been used to produce over 100,000 8" wafers. Additional mm-wave enablement devices offered in the process include MOS varactors, P-I-N diodes and sub-10fF MIM capacitors. Additional key metrics for the SiGe HBT device include an NF MIN of 2dB at 40GHz, a BV CEO of 1.6V and a DC current gain of 1200.
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BCTM.2011.6082752