A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power

A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power

An efficient power amplifier (PA) is demonstrated in a 0.12-μm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a p...

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Bibliographische Detailangaben
Hauptverfasser: Dabag, H-T, Joohwa Kim, Larson, L. E., Buckwalter, J. F., Asbeck, P. M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
45GHz
BiCMOS
Current measurement
Gain
Heterojunction bipolar transistors
Impedance
Impedance matching
millimeter-wave integrated circuit
power amplifier
Power generation
Q-band
Silicon germanium
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Beschreibung
Zusammenfassung:An efficient power amplifier (PA) is demonstrated in a 0.12-μm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 25 % at an output power of 13 dBm in linear operation and 31% in class B mode at an output power of 13.3 dBm. The maximum saturated output power P sat is 14.8 dBm, at which the circuit consumes 77 mW. The chip occupies an area of 0.27 mm 2 including pads.
ISSN:1088-9299
2378-590X
DOI:10.1109/BCTM.2011.6082742