A SOI CMOS smart strain sensor

A SOI CMOS smart strain sensor

A CMOS strain sensor has been fabricated in a 1μm FD SOI CMOS process. It is based on the piezoresistive effects of PMOS transistors and integrates a frequency conversion circuit. Testing of the chip mounted on a bent hard steel blade shows fair sensitivity for 10 μW power consumption.

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Bibliographische Detailangaben
Hauptverfasser: Rue, B., Olbrechts, B., Raskin, J.-P, Flandre, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Blades
CMOS
CMOS integrated circuits
fully-depleted SOI
Low-Power Consumption
Mirrors
Piezoresistivity
Silicon
Steel
Strain
Strain sensor
Stress
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Beschreibung
Zusammenfassung:A CMOS strain sensor has been fabricated in a 1μm FD SOI CMOS process. It is based on the piezoresistive effects of PMOS transistors and integrates a frequency conversion circuit. Testing of the chip mounted on a bent hard steel blade shows fair sensitivity for 10 μW power consumption.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2011.6081791