Implant approaches and challenges for 20nm node and beyond ETSOI devices
Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20 nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be...
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| creator | Ponoth, S. Vinet, M. Grenouillet, L. Kumar, A. Kulkarni, P. Liu, Q. Cheng, K. Haran, B. Posseme, N. Khakifirooz, A. Loubet, N. Mehta, S. Kuss, J. Destefanis, V. Berliner, N. Sreenivasan, R. Le Tiec, Y. Kanakasabapathy, S. Schmitz, S. Levin, T. Luning, S. Hook, T. Khare, M. Shahidi, G. Doris, B. |
| description | Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20 nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme. |
| doi_str_mv | 10.1109/SOI.2011.6081679 |
| format | Conference Proceeding |
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Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme.</description><subject>Epitaxial growth</subject><subject>Implants</subject><subject>Ions</subject><subject>Optical fibers</subject><subject>Performance evaluation</subject><subject>Silicon</subject><subject>Tuning</subject><issn>1078-621X</issn><issn>2577-2295</issn><isbn>9781612847610</isbn><isbn>1612847617</isbn><isbn>1612847595</isbn><isbn>9781612847597</isbn><isbn>9781612847603</isbn><isbn>1612847609</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1Kw0AYRcc_MNbsBTd5gcT55n-WUlobKHRhBXdlJvONjaRJSIrQtzdoVofLgcvlEvIEtACg9uV9VxaMAhSKGlDaXpEHUMCM0NLKa5IwqXXOmJU3JLXazE4BvSUJUG1yxeDznqTj-E0pBSuU0Dwhm_LUN649Z67vh85VRxwz14asOrqmwfZrirEbMkbbU9Z2Af-kx0s3YbWfRmUBf-oKx0dyF10zYjpzQT7Wq_1yk293b-XydZvXoOU5R8E0syEGyUPkHn1ELrxnzlisgkZvJFKFQoJkRgfuBEerwEXnhaxk4Avy_N9bI-KhH-qTGy6H-RT-C2MiUPI</recordid><startdate>201110</startdate><enddate>201110</enddate><creator>Ponoth, S.</creator><creator>Vinet, M.</creator><creator>Grenouillet, L.</creator><creator>Kumar, A.</creator><creator>Kulkarni, P.</creator><creator>Liu, Q.</creator><creator>Cheng, K.</creator><creator>Haran, B.</creator><creator>Posseme, N.</creator><creator>Khakifirooz, A.</creator><creator>Loubet, N.</creator><creator>Mehta, S.</creator><creator>Kuss, J.</creator><creator>Destefanis, V.</creator><creator>Berliner, N.</creator><creator>Sreenivasan, R.</creator><creator>Le Tiec, Y.</creator><creator>Kanakasabapathy, S.</creator><creator>Schmitz, S.</creator><creator>Levin, T.</creator><creator>Luning, S.</creator><creator>Hook, T.</creator><creator>Khare, M.</creator><creator>Shahidi, G.</creator><creator>Doris, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201110</creationdate><title>Implant approaches and challenges for 20nm node and beyond ETSOI devices</title><author>Ponoth, S. ; 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Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme.</abstract><pub>IEEE</pub><doi>10.1109/SOI.2011.6081679</doi><tpages>2</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Epitaxial growth Implants Ions Optical fibers Performance evaluation Silicon Tuning |
| title | Implant approaches and challenges for 20nm node and beyond ETSOI devices |
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