Implant approaches and challenges for 20nm node and beyond ETSOI devices

Implant approaches and challenges for 20nm node and beyond ETSOI devices

Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20 nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be...

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Hauptverfasser: Ponoth, S., Vinet, M., Grenouillet, L., Kumar, A., Kulkarni, P., Liu, Q., Cheng, K., Haran, B., Posseme, N., Khakifirooz, A., Loubet, N., Mehta, S., Kuss, J., Destefanis, V., Berliner, N., Sreenivasan, R., Le Tiec, Y., Kanakasabapathy, S., Schmitz, S., Levin, T., Luning, S., Hook, T., Khare, M., Shahidi, G., Doris, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Epitaxial growth
Implants
Ions
Optical fibers
Performance evaluation
Silicon
Tuning
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Beschreibung
Zusammenfassung:Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20 nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2011.6081679