Investigation into mechanisms of scattering in plasma waves heterostructures

Based upon the method of statistical modeling, the study on the key mechanisms of wave scattering in semiconductor heterostructures, has been carried out. Besides, the basic characteristics of the physical process involving the charge carrier transfer under the condition of plasma waves occurrence h...

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Bibliographische Detailangaben
Hauptverfasser: Muravrev, V. V., Tamelo, A. A., Mishenko, V. N., Molodkin, D. F.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Based upon the method of statistical modeling, the study on the key mechanisms of wave scattering in semiconductor heterostructures, has been carried out. Besides, the basic characteristics of the physical process involving the charge carrier transfer under the condition of plasma waves occurrence have been likewise examined. The novel feature about these processes is the application of the statistical modelling and the self-consistent solution of equations of the hydrodynamic model. This allowed one to reveal the basic physical mechanisms behind an increasing velocity of plasma wave propagation and to lay down the requirements for selecting the heterostructure electro-physical parameters to produce THz-range oscillations.