Computational study of carrier injection in III-nitride core-shell nanowire-LEDs

Computational study of carrier injection in III-nitride core-shell nanowire-LEDs

We report on the computational analysis of a core-shell GaN/InGaN nanowire LED with a capped pyramidal top. The active region consists of a polar multi quantum well (MQW) at the top, a non-polar MQW along the lateral face and a semi-polar one joining them. Differences in the opto-electronic characte...

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Hauptverfasser: Deppner, M., Romer, F., Witzigmann, B., Ledig, J., Neumann, R., Waag, A., Bergbauer, W., Strassburg, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Computational modeling
Crystals
Gallium nitride
Light emitting diodes
Luminescence
Quantum well devices
Strain
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Zusammenfassung:We report on the computational analysis of a core-shell GaN/InGaN nanowire LED with a capped pyramidal top. The active region consists of a polar multi quantum well (MQW) at the top, a non-polar MQW along the lateral face and a semi-polar one joining them. Differences in the opto-electronic characteristics of the three crystal orientations can be examined, arising from polarization effects as well as the strain-induced bandedge shift. Furthermore the influence of carrier injection efficiency in a nanowire is investigated.
DOI:10.1109/SCD.2011.6068745