An impact analysis of gate resistance on static and dynamic dissipation of IGBT modules

Gate resistor (R G ) has a significant impact on the performances of drive circuit. At first, this paper theoretically analyzes the influence of gate resistor on those parameters including switching behavior, electromagnetic interference (EMI), overvoltage and dv/dt induced current. Then it discusse...

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Hauptverfasser: Shao-Wei Hu, Yang-Jun Zhu, Yao-Yu Duan
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Gate resistor (R G ) has a significant impact on the performances of drive circuit. At first, this paper theoretically analyzes the influence of gate resistor on those parameters including switching behavior, electromagnetic interference (EMI), overvoltage and dv/dt induced current. Then it discusses how to select a suitable drive module for the selected R G from the view of applications. The recommended gate resistors in the applications are also given. At last, some principles and techniques in circuit layout are talked. This paper can provide some references for circuit designers.
DOI:10.1109/ICECC.2011.6066394