Impact of Reference Voltage on the ELDRS Characteristics of the LM4050 Shunt Voltage Reference

Impact of Reference Voltage on the ELDRS Characteristics of the LM4050 Shunt Voltage Reference

Two different reference voltage options (2.5V and 5.0V) of National Semiconductor's LM4050WGxxRLQV shunt voltage reference were put through Total Ionizing Dose (TID) testing at High Dose Rate (HDR) and Low Dose Rate (LDR) with different biasing conditions during irradiation and showed different...

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Bibliographische Detailangaben
Hauptverfasser: Kruckmeyer, K., Thang Trinh, McGee, L., Kelly, A. T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Military standards
Pins
Radiation effects
Resistors
Sensitivity
Testing
Transceivers
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Beschreibung
Zusammenfassung:Two different reference voltage options (2.5V and 5.0V) of National Semiconductor's LM4050WGxxRLQV shunt voltage reference were put through Total Ionizing Dose (TID) testing at High Dose Rate (HDR) and Low Dose Rate (LDR) with different biasing conditions during irradiation and showed different sensitivities to the different dose rates and bias conditions. Another product, DS16F95WxFQMLV, that uses the same wafer fabrication process had a different TID response.
ISSN:2154-0519
DOI:10.1109/REDW.2010.6062532